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100V, 2.5A, High-Frequency, Half-Bridge Gate Driver AEC-Q100 Qualified
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The MPQ18021HN-A is a high-frequency, 100V, half-bridge, N-channel power MOSFET driver. Its low-side and high-side driver channels are controlled independently and matched with a time delay of less than 5ns. Under-voltage lockout (UVLO) on both the high-side and low-side supplies force their outputs low in the case of an insufficient supply. The integrated bootstrap diode reduces the external component count.
The MPQ18021HN-A is available in a cost-effective SOIC-8E package.
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- Guaranteed Industrial / Automotive Temperature Range Limits
- Drives N-Channel MOSFET Half-Bridge
- 100V VBST Voltage Range
- On-Chip Bootstrap Diode
- Typical 16ns Propagation Delay Time
- Less than 5ns Gate Drive Matching
- Drives 1nf Load with 12ns/9ns Rise/Fall Times with 12V VDD
- TTL-Compatible Input
- Less than 160μA Quiescent Current
- UVLO for both High-Side and Low-Side
- Available in a SOIC-8E Package
- Available in AEC-Q100 Qualified Grade 1
EVQ18021HN-A-00A Evaluation Kit 100V, High-Frequency, Half-Bridge Gate Driver Evaluation Board
This EVQ18021HN-A-00A is an evaluation board documentation for the MPQ18021HN-A. The MPQ18021HN-A is a high-frequency, 100V, half bridge N-channel power MOSFET driver. Its low-side and high-side driver channels are independently controlled and matched with a time delay of less than 5ns. Under-voltage lockout on both the high-side and low-side supplies force their outputs low in case of insufficient supply. The integrated bootstrap diode reduces external component count.
This demo board is configured to a buck converter. INH and INL are independent signals of each other. For simplicity, the user only needs to supply a PWM signal to this demo board and the on-board circuitry will generate INH and INL signals with proper dead time. In a real system, the controller takes care of the dead-time adjustment.