100V, 2.5A, High-Frequency, Half-Bridge Gate Driver AEC-Q100 Qualified
The MPQ18021HN-A is a high-frequency, 100V, half-bridge, N-channel power MOSFET driver. Its low-side and high-side driver channels are controlled independently and matched with a time delay of less than 5ns. Under-voltage lockout (UVLO) on both the high-side and low-side supplies force their outputs low in the case of an insufficient supply. The integrated bootstrap diode reduces the external component count.
The MPQ18021HN-A is available in a cost-effective SOIC-8E package.
- Guaranteed Industrial / Automotive Temperature Range Limits
- Drives N-Channel MOSFET Half-Bridge
- 100V VBST Voltage Range
- On-Chip Bootstrap Diode
- Typical 16ns Propagation Delay Time
- Less than 5ns Gate Drive Matching
- Drives 1nf Load with 12ns/9ns Rise/Fall Times with 12V VDD
- TTL-Compatible Input
- Less than 160μA Quiescent Current
- UVLO for both High-Side and Low-Side
- Available in a SOIC-8E Package
- Available in AEC-Q100 Qualified Grade 1
- Number of Half-Bridges1
- PackageSOIC-8 EP
- Vin (max) (V)18
- Vin (min) (V)9
100V, High Frequency Half-Bridge Gate Driver EV Board
This is EV board documentation for MPQ18021HN-A. The MPQ18021HN-A is a high frequency, 100V half bridge N-channel power MOSFET driver. Its low side and high side driver channels are independently controlled and matched with a time delay of less than 5ns. Under-voltage lockout on both high side and low side supplies force their outputs low in case of insufficient supply. The integrated bootstrap diode reduces external component count.
This demo board is configured to a buck converter. INH and INL are independent signals of each other. For simplicity, the user only need to supply a PWM signal to this demo board and the on-board circuitry will generate INH and INL signals with proper dead time. In a real system, the controller will have to take care of dead time adjustment.
$50.00 + tax