The MPQ1922 is a 100V, single-channel, IC gate driver designed for motor drivers and other power control applications. The two N-channel power MOSFETs are set up in a half H-bridge configuration, and can operate from power supplies up to 100V. The device is AEC-Q100 qualified for automotive use.
The device integrates a bootstrap (BST) capacitor and an internal charge pump to generate a supply voltage for the high-side MOSFET (HS-FET) driver. The HS-FET driver generates a voltage that exceeds the power supply, which is capable of indefinitely maintaining a high output at 100% duty cycle operation.
Features include configurable slew rate control, FET desaturation protection, adjustable dead-time control, under-voltage lockout (UVLO), and thermal shutdown. The MPQ1922 is available in a QFN-22 (4mmx5mm) package with an exposed thermal pad, and is available in AEC-Q100 Grade 1.
Supports 100V Operation Voltage with 3A Source, 4A Sink Gate Driver Current
Integrated Current-Sense Amplifier
Internal Charge Pump and Auto-Bootstrap (Auto-BST) Refresh
External MOSFETs Provide Desaturation Protection and Shoot-Through Protection
Configurable Slew Rate
Available in AEC-Q100 Grade 1
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The EVQ1922-V-00A is an evaluation board designed for the MPQ1922, a half-bridge gate driver that can be used in motor drivers and other power control applications. The MPQ1922 drives two N-channel power MOSFETs in a half-bridge configuration, and can operate from power supplies up to 100V.
To prevent shoot-through in the output MOSFETs, the MPQ1922 generates an adaptive dead time (DT) by monitoring the gate driver output voltages. This ensures that each MOSFET gate has been fully discharged before the opposite MOSFET turns on. A longer DT can be generated by adding a delay between the INH and INL input signals.
The EVQ1922-V-00A can operate with a buck converter, and the INH and INL signals are independent of one another. The MPQ1922 is available in a QFN-22 (4mmx5mm) package, and is AEC-Q100 qualified.