The MPQ6533 is a gate driver IC designed for automotive DC motor driver applications. The device drives six N-channel power MOSFETs to drive DC motors or other loads.

The device integrates a low-dropout (LDO) regulator to generate gate drive voltages for the low-side MOSFETs (LS-FETs). The device also provides a charge pump that generates a voltage to drive an external N-channel MOSFET for reverse-battery protection. The high-side gate drive is generated by the bootstrap capacitors and an internal charge pump, which allows for 100% duty cycle operation. An internal amplifier measures the voltage drop across the LS-FETs. This allows the current to be measured without using shunt resistors.

Internal safety features include configurable over-current protection (OCP), adjustable dead time control, under-voltage lockout (UVLO), and thermal shutdown. The MPQ6533 is available in a QFN-32 (5mmx5mm) package with an exposed thermal pad.

Advantages include:

• Integrated LDO Regulator for Gate Drive
• Charge Pump for External N-Channel MOSFET Reverse Battery Protection
• Internal Current-Sense Amplifier, Serial Peripheral Interface (SPI), and Fault Indication Output
• Robust Protection Functions Include Configurable Over-Current Protection (OCP), Adjustable Dead-Time Control, Under-Voltage Lockout (UVLO), and Over-Temperature Protection (OTP)