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- MP8699B
MP8699B
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- trise (ns)10
- tfall (ns)3
- Package (mm)WLCSP-12L (2x2)
- VCC (min) (V)4.5
- VCC (max) (V)5.5
- VPWM (V)5
- Driver ChannelHalf-Bridge
- Pull-Down/Pull-Up Resistance (Ω)5
The MP8699B is a MOSFET driver designed to drive enhancement-mode gallium nitride (GaN) MOSFETs and N-channel MOSFETs with low gate voltages in half-bridge or synchronous applications. The device has independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs.
The MP8699B employs MPS’s proprietary bootstrap (BST) technique for the high-side MOSFET (HS-FET) driver voltage, and can operate up to 100V. The BST charging technology prevents the HS-FET driver voltage from exceeding the supply voltage (VCC), which prevents the gate voltage (VGATE) from exceeding the enhancement-mode GaN MOSFET’s maximum gate-to-source voltage (VGS) rating.
The MP8699B has two separate gates for independent MOSFET turn-on and turn-off speed control by adding impedance to the gate loop.
The MP8699B is available in a WLCSP-12L (2mmx2mm) package.
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Features & Benefits
- Independent High-Side (HS) and Low-Side (LS) Logic Inputs
- High-Side MOSFET (HS-FET) Floating Bias Voltage Rail Operates Up to 100VDC
- Separate Gate Outputs for Adjustable Turn-On and Turn-Off Speed Control
- 4.5V to 5.5V Supply Voltage (VCC) Range
- 0.2Ω Pull-Down Resistance and 1.3Ω Pull-Up Resistance
- Fast Propagation Time (Typically 17ns)
- Excellent Propagation Delay Matching (Typically 1.5ns)
- Available in a WLCSP-12L (2mmx2mm) Package
Active Part Numbers:
MP8699BGC-Z MP8699BGC-P
Part numbers ending in P and Z are the same parts. P and Z only indicates reel size.
Meaning of P & Z
MP8699B Resources
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