MP1906
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Product Features
- Drives Two Low-Cost, High-Efficiency N-MOSFETs
- 10V-16V Gate Drive Supply
- 3.3V, 5V Logic Compatibility
- 80ns Propagation Delay
- Less than 90μA Quiescent Current
- Under-Voltage Lockout for Both Channels
- Input-Signal-Overlap Protection
- Internal 150ns Dead Time
- Available in a Compact 8-pin SOIC Package
Parametrics
- GradeCatalog
- PackageSOIC-8
- Bootstrap Supply (max) (V)80
- trise (ns)50
- Turn-On Delay (ns)80
- tfall (ns)30
- Turn-Off Delay (ns)80
- Peak Ipull-up (A)0.35
- Peak Ipull-down (A)1
- Vin (max) (V)16
- Vin (min) (V)10
80V, High Frequency Half-Bridge Gate Driver EV Board
This is EV board documentation for MP1906. The MP1906 is a high-performance, 80V, gate driver that can drive two external N-MOSFETs in a half-bridge configuration with 12V gate supply. It accepts independent gate input signals and provides shoot-through prevention. During voltage lockout, the output of the high- and low-side driver goes low to prevent erratic operation under low supply conditions. The high-current driving capability and short dead time make it suitable for high-power and high-efficiency power applications.
This demo board is configured to a Half-Bridge.. For simplicity, HPWM and LPWM are connected together and drove by a same PWM signal generated by NE555. The user can evaluate MP1906 performance expediently.
$25.00 + tax
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