Toggle Nav
Menu
close
Select Store
EN
Cart 0
Account
Cart 0

  • Cart

  • Compare Products
Select Store
EN
Search
Search (Parametric or keywords)

Parametric Search DC-DC

Input

Output

Show 601 Results

Parametric Search Modules

Input

Output

Show 61 Results

Parametric Search BMS

Input

Output

1 cell
2 cell
3 cells
4 cells
5 cells
Show 64 Results

Parametric Search ALL

Input

Output

Show 1712 Results
code is temp removed to debug

MP1906

Active
80V, Half-Bridge, Gate Driver
Learn about our Evaluation Kit
Talk to an Engineer or get a Quote

Datasheet (EN)

You have a basic account.
A myMPS+ account is needed.

Upgrade to myMPS+

Product Description

The MP1906 is a high-performance, 80V, gate driver that can drive two external N-MOSFETs in a half-bridge configuration with a 12V gate supply. It accepts independent gate input signals and provides shoot-through prevention. During under-voltage lockout, the output of the high- and low-side drivers goes low to prevent erratic operation under low supply conditions. The high-current driving capability and short dead time make it suitable for high-power and high-efficiency power applications, such as telecom DC-DC converters. The compact 8-pin SOIC package minimizes the component count and the board space.

Product Features

  • Drives Two Low-Cost, High-Efficiency N-MOSFETs
  • 10V-16V Gate Drive Supply
  • 3.3V, 5V Logic Compatibility
  • 80ns Propagation Delay
  • Less than 90μA  Quiescent Current
  • Under-Voltage Lockout for Both Channels
  • Input-Signal-Overlap Protection
  • Internal 150ns Dead Time
  • Available in a Compact 8-pin SOIC Package

Parametrics

  • GradeCatalog
  • PackageSOIC-8
  • Bootstrap Supply (max) (V)80
  • trise (ns)50
  • Turn-On Delay (ns)80
  • tfall (ns)30
  • Turn-Off Delay (ns)80
  • Peak Ipull-up (A)0.35
  • Peak Ipull-down (A)1
  • Vin (max) (V)16
  • Vin (min) (V)10

Evaluation Kit

GET THIS KIT

Kit details

This is EV board documentation for MP1906. The MP1906 is a high-performance, 80V, gate driver that can drive two external N-MOSFETs in a half-bridge configuration with 12V gate supply. It accepts independent gate input signals and provides shoot-through prevention. During voltage lockout, the output of the high- and low-side driver goes low to prevent erratic operation under low supply conditions. The high-current driving capability and short dead time make it suitable for high-power and high-efficiency power applications.

This demo board is configured to a Half-Bridge.. For simplicity, HPWM and LPWM are connected together and drove by a same PWM signal generated by NE555. The user can evaluate MP1906 performance expediently.

$25.00 + tax


Reference Materials