EV1906-S-00A
80V, High Frequency Half-Bridge Gate Driver EV Board
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Product Description
This is EV board documentation for MP1906. The MP1906 is a high-performance, 80V, gate driver that can drive two external N-MOSFETs in a half-bridge configuration with 12V gate supply. It accepts independent gate input signals and provides shoot-through prevention. During voltage lockout, the output of the high- and low-side driver goes low to prevent erratic operation under low supply conditions. The high-current driving capability and short dead time make it suitable for high-power and high-efficiency power applications.
This demo board is configured to a Half-Bridge.. For simplicity, HPWM and LPWM are connected together and drove by a same PWM signal generated by NE555. The user can evaluate MP1906 performance expediently.
Product Features
- Drives Two Low Cost and High-Efficiency N-MOSFETs
- 10V-16V Gate DriveSupply
- 3.3V, 5V Logic Compatibility
- 80ns Propagation Delay Time
- Less than 90μA Quiescent Current
- Undervoltage Lockout for Both Channels
- Input Signal Overlap Protection
- Internal 150ns Dead Time
- Available in a Compact 8-pin SOIC Package
Parametrics
80V, Half-Bridge, Gate Driver
The MP1906 is a high-performance, 80V, gate driver that can drive two external N-MOSFETs in a half-bridge configuration with a 12V gate supply. It accepts independent gate input signals and provides shoot-through prevention. During under-voltage lockout, the output of the high- and low-side drivers goes low to prevent erratic operation under low supply conditions. The high-current driving capability and short dead time make it suitable for high-power and high-efficiency power applications, such as telecom DC-DC converters. The compact 8-pin SOIC package minimizes the component count and the board space.
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