MPQ1918-AEC1

MPQ1918-AEC1

100V, 1.6A, 5A, EMI-Optimized Half-Bridge GaN Driver, AEC-Q100 Qualified

Description

The MPQ1918-AEC1 is designed to drive enhancement-mode Gallium Nitride (GaN) FETs and low gate threshold voltage N-Channel MOSFETs in a half-bridge or synchronous application. The MPQ1918-AEC1 employs independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs.

The MPQ1918-AEC1 employs a bootstrap (BST) technique for the HS driver voltage, and can operate up to 100V. This new charging technology prevents the HS driver voltage from exceeding the 5V driver supply voltage (V_CC). This prevents the gate voltage from exceeding the maximum gate-source voltage rating of the enhancement-mode GaN FETs.

The device has two separate gate outputs. These outputs allow the turn-on and turn-off capabilities to be adjusted independently by adding impedance to the gate loop. The IC can operate up to several MHz.

The MPQ1918-AEC1 is available in an EMI-optimized FCQFN-14 (3mmx3mm) package with wettable flanks.

Features & Benefits

High-Performance GaN Driver:
- Independent High-Side (HS) and Low-Side (LS) TTL Logic Inputs
- HS Floating Bias Voltage Rail Operates up to 100V_DC
- Separate Gate Outputs for Adjustable Turn-On and Turn-Off Capability
- Internal Bootstrap (BST) Switch Supply Voltage Clamping
- 3.6V to 5.5V V_CC Range
Designed for High Efficiency:
- 1.6A Peak Source Current, 5A Peak Sink Current
- 0.2Ω Pull-Down Resistance, 1.2Ω Pull-Up Resistance
- Fast Propagation Times
- Excellent Propagation Delay Matching (Typically 1.5ns)