Order- MPQ1918-AEC1
MPQ1918-AEC1
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Description
The MPQ1918-AEC1 is designed to drive enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs with a low gate threshold voltage in a half-bridge or synchronous application.
The MPQ1918-AEC1 features independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs. It also provides a bootstrap technique for the HS driver voltage, and can operate up to 100V. The new charging technology prevents the HS driver voltage from exceeding the VCC voltage (VCC), which prevents the gate voltage from exceeding the GaN FET’s maximum gate-to-source voltage rating.
The MPQ1918-AEC1 has two separate gate outputs, allowing the turn-on and turn-off capabilities to be independently adjusted by adding an impedance to the gate loop. The MPQ1918-AEC1 can operate up to several MHz.
The MPQ1918-AEC1 is available in an FCQFN-14 (3mmx3mm) package with wettable flanks.
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Features & Benefits
- Independent High-Side (HS) and Low-Side (LS) TTL Logic Inputs
- HS Floating Biased Voltage Rail Operates Up to 100VDC
- Separate Gate Outputs for Adjustable Turn-On and Turn-Off Capabilities
- Internal Bootstrap Switch Supply Voltage Clamping
- 3.7V to 5.5V VCC Voltage (VCC) Range
- 0.27Ω/1.2Ω Pull-Down/Pull-Up Resistance
- Fast Propagation Times
- Excellent Propagation Delay Matching (Typically 1.5ns)
- Available in an FCQFN-14 (3mmx3mm) Package with Wettable Flanks
- Available in AEC-Q100 Grade 1
Active Part Numbers:
MPQ1918GQE-AEC1-Z MPQ1918GQE-AEC1-P
Part numbers ending in P and Z are the same parts. P and Z only indicates reel size.
Meaning of P & Z
MPQ1918-AEC1 Resources
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