The MP8697 is designed to drive enhancement-mode gallium nitride (GaN) FETs or low gate threshold voltage N-channel MOSFETs in switched-tank converters (STCs). It can also support half-bridge and synchronous applications. The device employs independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs.

The MP8697 employs bootstrap (BST) technology to charge both the HS and LS driver voltage, and can operate up to 100V. The internal charging logic control prevents the HS and LS driver voltages from exceeding the supply voltage (V_CC), which then prevents the gate voltage (V_G) from exceeding the enhancement-mode GaN FETs' maximum gate-source voltage (V_GS) rating. 

The extremely low sink resistor maintains the gate in the low state, preventing unintended turn-ons during high switching.

The MP8697 is available in a WLCSP-12 (2mmx2mm) package.