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GaN Drivers

Independent Control
Independent high-side and low-side logic inputs
Superior Performance
HS-FET’s floating bias voltage rail operates up to 100VDC
High Efficiency
Proprietary bootstrap charging technique

MPS’s GaN drivers are designed to drive enhancement-mode gallium nitride (GaN) MOSFETs and N-channel MOSFETs with low gate voltages in half-bridge or synchronous applications. They employ MPS’s proprietary bootstrap (BST) technique for the high-side MOSFET (HS-FET) driver voltage, and can operate up to 100V. The BST charging technology prevents the HS-FET driver voltage from exceeding the supply voltage (VCC), which prevents the gate voltage (VGATE) from exceeding the enhancement-mode GaN MOSFET’s maximum gate-to-source voltage (VGS) rating.



参照表示列
ステータス
MPS在庫状況
VCC（最小）（V）
VCC（最大）（V）
VPWM (V)
Driver Channel
trise (ns)
tfall (ns)
Pull-Down/Pull-Up Resistance (Ω)
パッケージ（mm）
Special Features
MPSafe
MPL
Product URL
テーブルのリセット
VCC（最小）（V）
VCC（最大）（V）
VPWM (V)
Driver Channel
trise (ns)
tfall (ns)
Pull-Down/Pull-Up Resistance (Ω)
パッケージ（mm）
Special Features
MPS
Half-Bridge
WLCSP-12L (2x2)
Excellent Propagation Delay Matching (Typically 1.5ns)
Fast Propagation Time (Typically 17ns)
HS-FET Floating Bias Voltage Rail Operates Up to 100VDC
Independent High-Side (HS) and Low-Side (LS) Logic Inputs
Is MPSafe Has MPL Product URL
     
MP8699B
アクティブ

ハーフブリッジGaN MOSFETドライバ

 MPSから購入 4.5 5.5 5 Half-Bridge 10 3 5 WLCSP-12L (2x2)
Excellent Propagation Delay Matching (Typically 1.5ns), Fast Propagation Time (Typically 17ns), HS-FET Floating Bias Voltage Rail Operates Up to 100VDC, Independent High-Side (HS) and Low-Side (LS) Logic Inputs
1 0 https://www.monolithicpower.com/jp/products/mp8699b.html
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