The MP8699B is designed to drive enhancement mode Gallium Nitride (GaN) FETs or low gate voltage threshold N-Channel MOSFETs in half-bridge or synchronous applications. The MP8699B employs independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs.

The device employs a bootstrap (BST) technique for the HS driver voltage, and can operate up to 100V. The new charging technology keeps the HS driver voltage below the VCC voltage, which prevents the gate voltage from exceeding the maximum gate-to-source voltage rating of the enhancement-mode GaN FETs.

The MP8699B has two separate gate outputs, which allow for independent adjustment of the turn-on and turn-off capability by adding impedance to the gate loop.

The MP8699B is available in a WLCSP-12L (2mmx2mm) package.