MP1906

80V, Half-Bridge, Gate Driver

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Datasheet

Description

The MP1906 is a high-performance, 80V, gate driver that can drive two external N-MOSFETs in a half-bridge configuration with a 12V gate supply. It accepts independent gate input signals and provides shoot-through prevention. During under-voltage lockout, the output of the high- and low-side drivers goes low to prevent erratic operation under low supply conditions. The high-current driving capability and short dead time make it suitable for high-power and high-efficiency power applications, such as telecom DC-DC converters. The compact 8-pin SOIC package minimizes the component count and the board space.

Features & Benefits

Drives Two Low-Cost, High-Efficiency N-MOSFETs
10V-16V Gate Drive Supply
3.3V, 5V Logic Compatibility
80ns Propagation Delay
Less than 90μA Quiescent Current
Under-Voltage Lockout for Both Channels
Input-Signal-Overlap Protection
Internal 150ns Dead Time
Available in a Compact 8-pin SOIC Package

Evaluation Tools

EV1906-S-00A Evaluation Kit 80V, High Frequency Half-Bridge Gate Driver EV Board

This is EV board documentation for MP1906. The MP1906 is a high-performance, 80V, gate driver that can drive two external N-MOSFETs in a half-bridge configuration with 12V gate supply. It accepts independent gate input signals and provides shoot-through prevention. During voltage lockout, the output of the high- and low-side driver goes low to prevent erratic operation under low supply conditions. The high-current driving capability and short dead time make it suitable for high-power and high-efficiency power applications.

This demo board is configured to a Half-Bridge.. For simplicity, HPWM and LPWM are connected together and drove by a same PWM signal generated by NE555. The user can evaluate MP1906 performance expediently.

$25.00
+ tax

Design Resources

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