The MPQ1918-AEC1 is designed to drive enhancement-mode Gallium Nitride (GaN) FETs and low gate threshold voltage N-Channel MOSFETs in a half-bridge or synchronous application. The MPQ1918-AEC1 employs independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs.
The MPQ1918-AEC1 employs a bootstrap (BST) technique for the HS driver voltage, and can operate up to 100V. This new charging technology prevents the HS driver voltage from exceeding the 5V driver supply voltage (VCC). This prevents the gate voltage from exceeding the maximum gate-source voltage rating of the enhancement-mode GaN FETs.
The device has two separate gate outputs. These outputs allow the turn-on and turn-off capabilities to be adjusted independently by adding impedance to the gate loop. The IC can operate up to several MHz.
The MPQ1918-AEC1 is available in an EMI-optimized FCQFN-14 (3mmx3mm) package with wettable flanks.
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