MPQ18021A

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100V, 2.5A, High Frequency, Half-Bridge Gate Driver



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Product Description

The MPQ18021A is a high-frequency, 100V, half-bridge, N-channel power MOSFET driver. Its low-side and high-side driver channels are independently controlled and matched with a time delay of less than 5ns. Under-voltage lockout on both high-side and low-side supplies force their outputs low in case of insufficient supply. The integrated bootstrap diode reduces external component count.

Product Features

  • Drives N-Channel MOSFET Half Bridge
  • 115V VBST Voltage Range
  • On-Chip Bootstrap Diode
  • Typical 16ns Propagation Delay Time
  • Less Than 5ns Gate Drive Matching
  • Drives 1nf Load with 12ns/9ns Rise/Fall Times with 12V VDD
  • TTL Compatible Input
  • Less Than 150A Quiescent Current
  • UVLO for Both High-Side and Low-Side
  • In SOIC8 Package

Parametrics

  • GradeIndustrial
  • 封装SOIC-8
  • Bootstrap Supply (max) (V)100
  • trise (ns)12
  • Turn-On Delay (ns)16
  • tfall (ns)9
  • Turn-Off Delay (ns)16
  • Peak Ipull-up (A)1.5
  • Peak Ipull-down (A)2.5
  • Vin (max) (V)18
  • Vin (min) (V)9

Evaluation Kit

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Kit details

This is EV board documentation for MPQ18021A. The MPQ18021A is a high frequency, 100V half bridge N-channel power MOSFET driver. Its low side and high side driver channels are independently controlled and matched with a time delay of less than 5ns. Under-voltage lockout on both high side and low side supplies force their outputs low in case of insufficient supply.  The integrated bootstrap diode reduces external component count.

This demo board is configured to a buck converter. INH and INL are independent signals of each other. For simplicity, the user only need to supply a PWM signal to this demo board and the on-board circuitry will generate INH and INL signals with proper dead time. In a real system, the controller will have to take care of dead time adjustment.

US$ 50.00 + tax