LN60A01

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600V, Triple N-Channel MOSFET with Common Gate Control


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产品描述

The LN60A01 is a three channel, 600V N-Channel, enhancement mode power FET manufactured in MPS's proprietary, high-voltage DMOS technology.?This advanced technology has been especially tailored to minimize the on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. This device is well suited for high efficiency switched mode power supplies and active power factor correction.?The LN60A01 is available in PDIP8 and SOIC8 package.

产品特性

  • 600V Breakdown Voltage
  • Three N-Channel MOSFETs
  • One Gate control to All Three FETs
  • Rds(on)=200Ω at Vgs=10V
  • Switching Current>0.1A
  • Fast Switching

技术参数

  • Power Range Defined
  • GradeCatalog
  • PackageDIP8, SOIC-8
  • Rds(on) (Ω)190
  • Vbr (V)600
  • ton (ns)999
  • toff (ns)999