EV1906-S-00A

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80V, High Frequency Half-Bridge Gate Driver EV Board

  • 数量 价格
  • 1
    US$ 25.00 /unit

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Product Description

This is EV board documentation for MP1906. The MP1906 is a high-performance, 80V, gate driver that can drive two external N-MOSFETs in a half-bridge configuration with 12V gate supply. It accepts independent gate input signals and provides shoot-through prevention. During voltage lockout, the output of the high- and low-side driver goes low to prevent erratic operation under low supply conditions. The high-current driving capability and short dead time make it suitable for high-power and high-efficiency power applications.

This demo board is configured to a Half-Bridge.. For simplicity, HPWM and LPWM are connected together and drove by a same PWM signal generated by NE555. The user can evaluate MP1906 performance expediently.

Product Features

  • Drives Two Low Cost and High-Efficiency N-MOSFETs
  • 10V-16V Gate DriveSupply
  • 3.3V, 5V Logic Compatibility
  • 80ns Propagation Delay Time
  • Less than 90μA  Quiescent Current
  • Undervoltage Lockout for Both Channels
  • Input Signal Overlap Protection
  • Internal 150ns Dead Time
  • Available in a Compact 8-pin SOIC Package

Parametrics

  • IC Supported 1MP1906

Monolithic IC

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IC Details

The MP1906 is a high-performance, 80V, gate driver that can drive two external N-MOSFETs in a half-bridge configuration with a 12V gate supply. It accepts independent gate input signals and provides shoot-through prevention. During under-voltage lockout, the output of the high- and low-side drivers goes low to prevent erratic operation under low supply conditions. The high-current driving capability and short dead time make it suitable for high-power and high-efficiency power applications, such as telecom DC-DC converters. The compact 8-pin SOIC package minimizes the component count and the board space.